(Nanowerk News) A group of researchers from Tohoku University has unveiled a new material that exhibits enormous magnetoresistance, paving the way for developments in non-volatile magnetoresistive ...
A team of scientists from Tohoku University has presented a new material with huge magnetoresistance, opening the path for developments in non-volatile magnetoresistive memory (MRAM). (a) A schematic ...
With the need for hardware to process large amounts of digital information ever growing, researchers are working hard to improve magnetoresistive devices. The magnetoresistance ratio indicates the ...
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