Kioxia says it has developed highly stackable oxide-semiconductor channel transistors capable of supporting high-density 3D DRAM. This development could lead to cheaper and faster memory by lowering ...
On June 4, 1968, Robert Dennard was granted a patent for a single transistor, single capacitor DRAM cell design idea. This doesn’t sound earth-shattering today, but back in the sixties, this was a ...
Kioxia Corporation, a world leader in memory solutions, today announced the development of highly stackable oxide-semiconductor channel transistors that will enable the practical implementation of ...
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